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Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array

Identifieur interne : 007C20 ( Main/Repository ); précédent : 007C19; suivant : 007C21

Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array

Auteurs : RBID : Pascal:07-0409001

Descripteurs français

Pascal (Inist)
- Détecteur IR, Réseau capteur, Photodétecteur, Matrice plan focal, Imageur, Transition interbande, Sous bande, Rayonnement IR proche, Formation image, Puits quantique, Indium arséniure, Gallium arséniure, Indium phosphure, Dispositif optoélectronique, 0757K, InGaAs, InP.

English descriptors

KwdEn :
- Focal plane arrays, Gallium arsenides, Imager, Imaging, Indium arsenides, Indium phosphide, Infrared detector, Interband transition, Near infrared radiation, Optoelectronic device, Photodetector, Quantum well, Sensor array, Subband.

Abstract

The realisation of an InGaAs/lnP quantum-well infrared photodetector focal plane array imaging device is reported. The long-wave infrared response is based on the intersubband transition (intraband) in the quantum wells. In addition, a near infrared (interband) response is demonstrated. This work shows the potential of the InGaAs/InP materials system for multi-spectral imaging applications.

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Pascal:07-0409001

Le document en format XML

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<author><name sortKey="Bezinger, A" uniqKey="Bezinger A">A. Bezinger</name>
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<author><name sortKey="Liu, H C" uniqKey="Liu H">H. C. Liu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Microstructural Sciences, National Research Council Ottawa</s1>
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<author><name sortKey="Asian, B" uniqKey="Asian B">B. Asian</name>
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<term>Indium phosphide</term>
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<front><div type="abstract" xml:lang="en">The realisation of an InGaAs/lnP quantum-well infrared photodetector focal plane array imaging device is reported. The long-wave infrared response is based on the intersubband transition (intraband) in the quantum wells. In addition, a near infrared (interband) response is demonstrated. This work shows the potential of the InGaAs/InP materials system for multi-spectral imaging applications.</div>
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<fC01 i1="01" l="ENG"><s0>The realisation of an InGaAs/lnP quantum-well infrared photodetector focal plane array imaging device is reported. The long-wave infrared response is based on the intersubband transition (intraband) in the quantum wells. In addition, a near infrared (interband) response is demonstrated. This work shows the potential of the InGaAs/InP materials system for multi-spectral imaging applications.</s0>
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Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array

Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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